Title :
Constant output power contour prediction for BJTs operating under class C
Author :
Chan, W.S. ; Yip, P.C.L
Author_Institution :
Dept. of Electron. Eng., City Univh. of Hong Kong, Kowloon, Hong Kong
fDate :
4/13/1995 12:00:00 AM
Abstract :
Constant output power contours have been predicted for silicon BJTs operating under class C and at UHF frequencies. This has been achieved by using a minimum of measurements and applying constant power gain circles, with the results obtained using the method showing good correlation
Keywords :
UHF bipolar transistors; UHF power amplifiers; elemental semiconductors; power bipolar transistors; semiconductor device testing; silicon; BJT; Si; UHF frequencies; class C operation; constant output power contour prediction; constant power gain circles;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950414
