DocumentCode
776804
Title
Influence of Fowler-Nordheim tunnelling current on the strong inversion high-frequency capacitance of thin-insulator N-type metal-oxide-semiconductor structures
Author
Xu, M. ; Tan, C. ; He, Y. ; Wang, Y.
Author_Institution
Dept of Comput. Sci. & Technol., Beijing Univ., China
Volume
31
Issue
8
fYear
1995
fDate
4/13/1995 12:00:00 AM
Firstpage
681
Lastpage
683
Abstract
A simple analysis is presented of the effect of Fowler-Nordheim tunnelling current on thin-insulator N-type metal-oxide-semiconductor capacitance in the strong inversion region. One mechanism responsible for the increase of capacitance under Fowler-Nordheim tunnelling current injection is described. The theoretical results are compared with the experimental data on thin-insulator N-type metal-oxide-semiconductor capacitors
Keywords
MOS capacitors; inversion layers; tunnelling; Fowler-Nordheim tunnelling current; MOS capacitance; capacitance increase; high-frequency capacitance; strong inversion; thin-insulator N-type metal-oxide-semiconductor structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950446
Filename
384035
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