Title :
Influence of Fowler-Nordheim tunnelling current on the strong inversion high-frequency capacitance of thin-insulator N-type metal-oxide-semiconductor structures
Author :
Xu, M. ; Tan, C. ; He, Y. ; Wang, Y.
Author_Institution :
Dept of Comput. Sci. & Technol., Beijing Univ., China
fDate :
4/13/1995 12:00:00 AM
Abstract :
A simple analysis is presented of the effect of Fowler-Nordheim tunnelling current on thin-insulator N-type metal-oxide-semiconductor capacitance in the strong inversion region. One mechanism responsible for the increase of capacitance under Fowler-Nordheim tunnelling current injection is described. The theoretical results are compared with the experimental data on thin-insulator N-type metal-oxide-semiconductor capacitors
Keywords :
MOS capacitors; inversion layers; tunnelling; Fowler-Nordheim tunnelling current; MOS capacitance; capacitance increase; high-frequency capacitance; strong inversion; thin-insulator N-type metal-oxide-semiconductor structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950446
