A gigasample/second 5-b ADC with on-chip track and hold based on an industrial 1 μm GaAs MESFET E/D process

Author

Hagelauer, Richard ; Oehler, Frank ; Rohmer, Günter ; Sauerer, Josef ; Seitzer, Dieter

Author_Institution

Fraunhofer-Inst. fuer Integrierte Schaltungen, Erlangen, Germany

Volume

27

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1313

Lastpage

1320

Abstract

To enhance the dynamic accuracy of high-speed A/D conversion, a 5-b flash converter with on-chip track and hold circuitry (T&H) was developed. The design is based on TriQuint´s commercial 1 μm GaAs E/D MESFET process. Dynamic characterization was performed up to 1 gigasample/second (GS/s). An accuracy of 4.4 effective bits even at 1 GS/s with full Nyquist input was achieved. A comparison showing the accuracy with T&H in operation and in tracking-only mode is given. The outstanding performance is due to a carefully designed and the use of differential source-coupled FET logic (SCFL) in the converter

Keywords

III-V semiconductors; analogue-digital conversion; digital integrated circuits; direct coupled FET logic; field effect integrated circuits; gallium arsenide; 1 micron; GaAs; GaAs MESFET E/D process; TriQuint commercial process; differential source-coupled FET logic; dynamic accuracy; dynamic characterization; flash converter; full Nyquist input; high-speed A/D conversion; on-chip track and hold; tracking-only mode; Clocks; Digital signal processing; Digital systems; FETs; Gallium arsenide; Logic design; MESFET circuits; Radar signal processing; Radar tracking; Signal resolution;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.156431

Filename

156431