Title :
Numerical calculation of the terahertz field-induced changes in the optical absorption in quantum wells
Author :
Maslov, A.V. ; Citrin, D.S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In the presence of a strong terahertz field, the optical (i.e., valence-to-conduction band) transitions in semiconductors occur between states which are altered by the terahertz field. This alteration has a direct impact on the optical absorption. We describe a numerical technique for calculating the optical absorption in this case by solving the Schrodinger equation for the electron-hole envelope function in real space. This technique correctly accounts for the Coulomb interaction between optically created electron-hole pairs and nonperturbative terahertz-field induced alteration of the states. We applied this technique to investigate the optical absorption of quantum wells of finite width in which terahertz/optical mixing can be significant and which cannot be treated analytically
Keywords :
Schrodinger equation; absorption coefficients; electroabsorption; excitons; finite element analysis; nonlinear optical susceptibility; quantum confined Stark effect; semiconductor quantum wells; Coulomb interaction; QCSE; Schrodinger equation; electroabsorption; electron-hole envelope function; excitons; finite-element discretization; light-hole states; optical absorption; optical susceptibility; optical transitions; semiconductor quantum wells; strong terahertz field; terahertz field-induced changes; terahertz/optical mixing; valence-conduction band transitions; Absorption; Frequency; Nonlinear optics; Optical beams; Optical devices; Optical mixing; Optical modulation; Optical sensors; Submillimeter wave technology; Ultrafast optics;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2002.1016348