Title :
High-speed photoluminescence mapping of III-V epitaxial layers for light-emitting diodes
Author :
Imler, William R.
Author_Institution :
Optoelectron. Div., Hewlett-Packard Co., San Jose, CA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
Three examples are presented which demonstrate how photoluminescence wafer mapping is routinely used in the development and manufacturing of III-V optoelectronic materials and devices. Statistical data from the full-wafer PL scans of epitaxial layers is correlated with the device performance of fabricated light-emitting diodes, and can be used to predict the brightness, uniformity and yield of these devices
Keywords :
III-V semiconductors; brightness; high-speed optical techniques; light emitting diodes; photoluminescence; semiconductor device testing; semiconductor epitaxial layers; III-V epitaxial layers; brightness; development; high-speed photoluminescence mapping; light-emitting diodes; manufacturing; optoelectronic materials; statistical data; uniformity; wafer mapping; yield; Epitaxial layers; III-V semiconductor materials; Laser excitation; Laser modes; Light emitting diodes; Manufacturing; Optical feedback; Optical pumping; Photoluminescence; Pump lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.488396
