Title :
Monolithic integration of vertical-cavity laser diodes with refractive GaAs microlenses
Author :
Strzelecka, E.M. ; Robinson, G.D. ; Peters, M.G. ; Peters, F.H. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/27/1995 12:00:00 AM
Abstract :
Beam collimation and focusing, necessary for practical use of vertical-cavity laser diodes, is achieved by the monolithic integration of lasers with refractive microlenses etched on the back side of the GaAs substrate. For 7 μm diameter lasers, an original beam divergence of 6.5° was reduced to 1.9° and increased to 12.3° with lenses of focal lengths ~220 μm, and ~60 μm, respectively
Keywords :
III-V semiconductors; focusing; gallium arsenide; integrated optics; laser cavity resonators; lenses; optical fabrication; semiconductor lasers; 7 micron; GaAs; GaAs substrate; beam collimation; focusing; monolithic integration; refractive GaAs microlenses; vertical-cavity laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950483
