Title :
Microwave performance of a Ga0.20In0.80P/Ga 0.47In0.53As/InP HFET grown with MOVPE
Author :
Rorsman, N. ; Karlsson, C. ; Hsu, C.C. ; Wang, S.M. ; Zirath, H.
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
4/27/1995 12:00:00 AM
Abstract :
The authors have DC, RF, and noise characterised 0.15 μm gate length HFETs fabricated on a pseudomorphic Ga0.20In0.80 P/Ga0.47In0.53As/InP material grown with MOVPE. The extrinsic transconductance is 640 mS/mm. The maximum frequency of oscillation is 260 GHz and the intrinsic transit frequency is 165 GHz. The DC and RF performances of this HFET are comparable with InAlAs/InGaAs/InP HFETs. The drain breakdown voltage of this HFET is 50% higher than InAlAs/InGaAs/InP HFETs fabricated in the authors laboratory
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; vapour phase epitaxial growth; 0.15 micron; 165 GHz; 260 GHz; 640 mS/mm; DC characteristics; Ga0.20In0.80P-Ga0.47In0.53 As-InP; HFET; MOVPE; RF characteristics; drain breakdown voltage; extrinsic transconductance; microwave performance; noise characteristics; pseudomorphic material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950517
