Title :
A fast-settling GaAs-enhanced frequency synthesizer
Author :
Naber, John F. ; Singh, Hausila P. ; Tanis, William J. ; Koshar, Andrew J. ; Segalla, Gregory L.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
An indirect, phase-locked-loop (PLL), GaAs-enhanced frequency synthesizer with 700 ns loop settling time has been developed. The two-chip GaAs insertion reduced the size of an existing synthesizer from 90 in3 to only 30 in3. The 6.0 in×5.5 in.×0.9 in module contains a 400 gate GaAs programmable divider and a sample and hold (S/H) which improved the settling time by 77% and reduced the size by 67% over the current state-of-the-art synthesizer. Furthermore, the divider reduced power dissipation by 9.7 W and the S/H reduced power dissipation by 1.3 W
Keywords :
III-V semiconductors; digital integrated circuits; dividing circuits; field effect integrated circuits; frequency synthesizers; gallium arsenide; phase-locked loops; 1 to 2 GHz; 700 ns; GaAs programmable divider; direct digital synthesizer; frequency synthesizer; loop settling time; phase-locked-loop; power dissipation; sample and hold; two-chip GaAs insertion; Counting circuits; Detectors; Frequency conversion; Frequency synthesizers; Gallium arsenide; Phase detection; Phase locked loops; Power dissipation; Voltage; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
