DocumentCode :
777193
Title :
Real-time optical thermometry during semiconductor processing
Author :
Herman, Irving P.
Author_Institution :
Dept. of Appl. Phys., Columbia Univ., New York, NY, USA
Volume :
1
Issue :
4
fYear :
1995
fDate :
12/1/1995 12:00:00 AM
Firstpage :
1047
Lastpage :
1053
Abstract :
The optical techniques used to monitor the temperature of wafers during semiconductor processing are surveyed. The physical principles underlying each method are described. Applications of each optical diagnostic are presented, along with the strengths and weaknesses of the probe. Most of these optical diagnostics have been implemented in research reactors to monitor wafer temperature during one or several types of thin-film processing, such as molecular beam epitaxy, rapid thermal processing, and plasma etching. Pyrometry is the workhorse of noninvasive optical probes of temperature, although it needs supporting models and optical measurements to improve accuracy. Other optical thermometric wafer diagnostics are very promising and are being developed intensively, particularly reflection interferometry, transmission spectroscopy, and various interferometry methods that directly measure the thermal expansion of the wafer
Keywords :
light interferometry; molecular beam epitaxial growth; pyrometers; rapid thermal processing; reflectometry; semiconductor technology; spectral methods of temperature measurement; sputter etching; thermal expansion measurement; visible spectroscopy; interferometry methods; molecular beam epitaxy; noninvasive optical probes; plasma etching; pyrometry; rapid thermal processing; real-time optical thermometry; reflection interferometry; semiconductor processing; thermal expansion measurement; thin-film processing; transmission spectroscopy; wafer temperature monitoring; Inductors; Molecular beam epitaxial growth; Optical films; Optical interferometry; Plasma measurements; Plasma temperature; Probes; Semiconductor thin films; Temperature measurement; Temperature sensors;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.488681
Filename :
488681
Link To Document :
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