DocumentCode
777278
Title
A 195-gb/s 1.2-W inductive inter-chip wireless superconnect with transmit power control scheme for 3-D-stacked system in a package
Author
Miura, Noriyuki ; Mizoguchi, Daisuke ; Inoue, Mari ; Sakurai, Takayasu ; Kuroda, Tadahiro
Author_Institution
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
Volume
41
Issue
1
fYear
2006
Firstpage
23
Lastpage
34
Abstract
A wireless interface by inductive coupling achieves aggregated data rate of 195 Gb/s with power dissipation of 1.2W among 4-stacked chips in a package where 195 transceivers with the data rate of 1 Gb/s/channel are arranged in 50-μm pitch in 0.25-μm CMOS technology. By thinning chip thickness to 10μm, the interface communicates at distance of 15 μm at minimum and 43 μm at maximum. A low-power single-end transmitter achieves 55% power reduction for multiple connections. The transmit power is dynamically controlled in accordance with communication distance to reduce not only power dissipation but also crosstalk.
Keywords
integrated circuit interconnections; low-power electronics; system-in-package; 0.25 micron; 1.2 W; 10 micron; 195 Gbit/s; 3D stacked system in a package; 50 micron; CMOS technology; crosstalk; inductive coupling; inductive interchip wireless superconnect; low power single end transmitter; power dissipation; transmit power control scheme; wireless interconnect; Bandwidth; CMOS technology; Costs; Coupling circuits; Electrostatic discharge; Packaging; Power control; Power dissipation; System-on-a-chip; Transceivers; High bandwidth; SiP; inductor; low power; three-dimensional; wireless interconnect;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2005.858625
Filename
1564342
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