Title :
Inhomogeneous exciton broadening and mean free path in In1-x GaxAsyP1-y-InP heterostructures
Author :
Jaeger, Arndt ; Weiser, Gerhard ; Wiedemann, Peter
Author_Institution :
Dept. of Phys., Marburg Univ., Germany
fDate :
12/1/1995 12:00:00 AM
Abstract :
Absorption and electroabsorption spectra are investigated at low temperature to derive broadening parameters of excitonic absorption edges in the alloy crystals. A strong increase of the inhomogeneous linewidth of excitons is observed for quaternary material which exceeds significantly the width expected from compositional fluctuations. The linewidth decreases again for phosphorous rich samples. Franz-Keldysh oscillations above the absorption edge contain information on the coherence length of band states. They show a corresponding decrease of the mean free path from 150 nm for ternary material to 70 nm for quaternary material
Keywords :
III-V semiconductors; carrier mean free path; electroabsorption; excitons; gallium arsenide; indium compounds; semiconductor heterojunctions; spectral line broadening; visible spectra; 150 nm; 70 nm; Franz-Keldysh oscillations; In1-xGaxAsyP1-y-InP heterostructures; InGaAsP-InP; absorption spectra; alloy crystals.; band states; broadening parameters; coherence length; compositional fluctuations; electroabsorption spectra; excitonic absorption edges; inhomogeneous exciton broadening; inhomogeneous linewidth; low temperature; mean free path; quaternary material; ternary material; Absorption; Crystals; Excitons; Fluctuations; Helium; Optical materials; Quantum well lasers; Reflectivity; Substrates; Temperature;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.488689
