DocumentCode :
777285
Title :
Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression
Author :
Suemitsu, T. ; Enoki, T. ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Volume :
31
Issue :
9
fYear :
1995
fDate :
4/27/1995 12:00:00 AM
Firstpage :
758
Lastpage :
759
Abstract :
The author investigate the effects of body contacts in InP-based In0.52Al0.48As/In0.53Ga0.47 As HEMTs. A body contact connecting a floating InAlAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p+-region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel resulting in higher breakdown voltage and kink-free I/V characteristics
Keywords :
aluminium compounds; avalanche breakdown; characteristics measurement; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; ohmic contacts; HEMTs; I/V characteristics; InGaAs-InAlAs-InP; InP; body contacts; breakdown voltage; buried p-layer; floating buffer; impact ionisation; kink suppression; ohmic electrode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950496
Filename :
384094
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=777285
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