Hot-carrier transport in thin-film SOI MOSFETs at room and cryogenic temperatures

Author

Balestra, F. ; Matsumoto, T. ; Nakabayashi, H. ; Tsuno, M. ; Inoue, Y. ; Koyanagi, M.

Author_Institution

Fac. of Eng., Tohoku Univ., Sendai, Japan

Volume

31

Issue

9

fYear

1995

fDate

4/27/1995 12:00:00 AM

Firstpage

759

Lastpage

761

Abstract

The influence of the substrate bias on the hot-carrier effects in thin-film SOI MOSFETs is investigated. It is shown that the high-field properties strongly depend on the substrate bias, with a substantial decrease of the impact ionisation rate for volume inversion operation, which is very promising for the reduction of hot-carrier-induced degradation of double-gate SOI MOSFETs. Furthermore, the analysis of the electrical properties of these devices in a wide temperature range allows us to propose a satisfactory model for the hot-carrier behaviours, which highlights the role of the substrate bias for control of the high-field region and thus, of the nonstationary transport in thin Si films

Keywords

MOSFET; cryogenic electronics; hot carriers; impact ionisation; inversion layers; silicon-on-insulator; thin film transistors; cryogenic temperatures; double-gate SOI MOSFETs; electrical properties; high-field properties; hot-carrier transport; impact ionisation rate; nonstationary transport; substrate bias; thin-film SOI MOSFETs; volume inversion operation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950469

Filename

384095