Title :
Photoluminescence, Raman, and infrared diagnosis of GaAs-AlGaAs superlattices for intersubband infrared detection
Author :
Feng, Zhe C. ; Perkowitz, Sidney ; Cen, Jianmin ; Bajaj, Krishan K. ; Kinell, Don K. ; Whitney, R.L.
Author_Institution :
Dept. of Phys., Emory Univ., Atlanta, GA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
We present optical diagnosis of GaAs-AlGaAs superlattices grown by molecular beam epitaxy for use as 8-20 μm infrared detectors, that combines photoluminescence, Raman, and Fourier transform infrared spectroscopies. Various structural and physical parameters were obtained by theoretical analysis of the optical results. The use of multiple optical techniques offers comprehensive characterization and further understanding of the physics of long wavelength infrared detectors
Keywords :
Fourier transform spectra; III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; infrared detectors; infrared spectra; molecular beam epitaxial growth; photoluminescence; semiconductor superlattices; 8 to 20 mum; Fourier transform infrared spectroscopy; GaAs-AlGaAs; GaAs-AlGaAs superlattices; Raman spectroscopy; infrared diagnosis; intersubband infrared detection; long wavelength infrared detectors; molecular beam epitaxy; multiple optical techniques; optical diagnosis; photoluminescence; physical parameters; structural parameters; Gallium arsenide; Infrared detectors; Infrared spectra; Molecular beam epitaxial growth; Optical scattering; Optical superlattices; Photoluminescence; Physics; Raman scattering; Spectroscopy;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.488690
