DocumentCode
777311
Title
Method for extracting deep submicrometre MOSFET parameters
Author
Fikry, W. ; Ghibaudo, G. ; Haddara, H. ; Cristoloveanu, S. ; Dutoit, M.
Author_Institution
Dept. of Electron. & Commun. Eng., Ain Shams Univ., Cairo, Egypt
Volume
31
Issue
9
fYear
1995
fDate
4/27/1995 12:00:00 AM
Firstpage
762
Lastpage
764
Abstract
As the MOSFET channel length shrinks to 0.1 μm, the influence of the lateral field on the device characteristics becomes increasingly important even at low drain voltage (10 mV). The authors present a new method which takes into account the effect of the lateral field to extract the deep submicrometre MOSFET parameters such as threshold voltage, effective channel length, effective mobility and parasitic series resistance
Keywords
MOSFET; carrier mobility; characteristics measurement; electric resistance measurement; semiconductor device testing; 0.1 micron; 10 mV; MOSFET channel length; deep submicrometre MOSFET parameters; device characteristics; drain voltage; effective channel length; effective mobility; lateral field; parasitic series resistance; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950481
Filename
384097
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