Title :
Analysis of second-harmonic generation by unamplified, high-repetition-rate, ultrashort laser pulses at Si(001) interfaces
Author :
Dadap, J.I. ; Hu, X.F. ; Russell, N.M. ; Ekerdt, J.G. ; Lowell, J.K. ; Downer, M.C.
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
State-of-the-art femtosecond lasers have the potential to dramatically improve the effectiveness of interface nonlinear optics for diagnosing Si(001) interface characteristics that are relevant to Si microelectronics manufacturing. We present an analysis of signal acquisition rate and parasitic surface heating for SHG by ultrashort laser pulses at Si(001) interfaces, emphasizing their dependence on the pulse duration, energy, repetition rate, wavelength and focal geometry of the pulses. The results of the analysis are illustrated by several experimental examples of SHG by a Ti: sapphire femtosecond laser from a buried Si(001)-SiO2 interface or a Si(001) surface during chemical vapor deposition
Keywords :
elemental semiconductors; high-speed optical techniques; interface structure; optical harmonic generation; oxidation; silicon; Al2O3:Ti; SHG; Si; Si (001) interfaces; Si microelectronics manufacturing; Si-SiO2; Ti:sapphire femtosecond laser; buried Si(001)-SiO2 interface; chemical vapor deposition; energy; focal geometry; interface nonlinear optics; parasitic surface heating; pulse duration; repetition rate; second-harmonic generation; signal acquisition rate; unamplified high-repetition-rate ultrashort laser pulses; wavelength; Heating; Manufacturing; Microelectronics; Nonlinear optics; Optical pulses; Optical surface waves; Signal analysis; Surface emitting lasers; Surface waves; Ultrafast optics;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.488693
