Analysis of second-harmonic generation by unamplified, high-repetition-rate, ultrashort laser pulses at Si(001) interfaces

Author

Dadap, J.I. ; Hu, X.F. ; Russell, N.M. ; Ekerdt, J.G. ; Lowell, J.K. ; Downer, M.C.

Author_Institution

Dept. of Phys., Texas Univ., Austin, TX, USA

Volume

1

Issue

4

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1145

Lastpage

1155

Abstract

State-of-the-art femtosecond lasers have the potential to dramatically improve the effectiveness of interface nonlinear optics for diagnosing Si(001) interface characteristics that are relevant to Si microelectronics manufacturing. We present an analysis of signal acquisition rate and parasitic surface heating for SHG by ultrashort laser pulses at Si(001) interfaces, emphasizing their dependence on the pulse duration, energy, repetition rate, wavelength and focal geometry of the pulses. The results of the analysis are illustrated by several experimental examples of SHG by a Ti: sapphire femtosecond laser from a buried Si(001)-SiO₂ interface or a Si(001) surface during chemical vapor deposition

Keywords

elemental semiconductors; high-speed optical techniques; interface structure; optical harmonic generation; oxidation; silicon; Al₂O₃:Ti; SHG; Si; Si (001) interfaces; Si microelectronics manufacturing; Si-SiO₂; Ti:sapphire femtosecond laser; buried Si(001)-SiO₂ interface; chemical vapor deposition; energy; focal geometry; interface nonlinear optics; parasitic surface heating; pulse duration; repetition rate; second-harmonic generation; signal acquisition rate; unamplified high-repetition-rate ultrashort laser pulses; wavelength; Heating; Manufacturing; Microelectronics; Nonlinear optics; Optical pulses; Optical surface waves; Signal analysis; Surface emitting lasers; Surface waves; Ultrafast optics;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.488693

Filename

488693