DocumentCode
777531
Title
Design and performance of multistage GaAs dynamic logic
Author
HÒeg, Fleming ; Long, Stephen I. ; Bhattacharya, Uddalak
Volume
30
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
580
Lastpage
585
Abstract
GaAs Two-Phase Dynamic FET Logic (TDFL) circuits are capable of extremely low power dissipation (20 nW/MHz/gate), high speed (1 GHz), and are compatible with static GaAs logic families. This paper demonstrates that TDFL can be modified to execute two or three stages of logic in one clock phase. This extension provides extremely high functional complexity per gate that can be used to reduce power dissipation, reduce latency, and increase circuit density in both sequential and computationally-oriented applications. The performance of these gates was demonstrated by E/D MESFET IC test circuits fabricated by a digital IC foundry. A one clock cycle, 8-b carry-lookahead adder operated at 350 MHz with only 1.1 mW of power dissipation
Keywords
III-V semiconductors; MESFET integrated circuits; adders; field effect logic circuits; gallium arsenide; logic design; 1 GHz; 1.1 mW; 350 MHz; 8 bit; E/D MESFET IC test circuits; GaAs; TDFL; Two-Phase Dynamic FET Logic; carry-lookahead adder; circuit density; clock phase; computationally-oriented applications; design; digital IC foundry; functional complexity; high speed circuits; latency; multistage GaAs dynamic logic; power dissipation; sequential applications; Circuit testing; Clocks; Delay; Digital integrated circuits; FETs; Gallium arsenide; Logic circuits; Logic design; MESFET integrated circuits; Power dissipation;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.384171
Filename
384171
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