DocumentCode
777716
Title
Characterization method for ionizing radiation degradation in power MOSFETs
Author
de la Bardonnie, M. ; Maouad, A. ; Mialhe, P. ; Elmazria, O. ; Hoffmann, A. ; Lepley, B. ; Charles, J.-P.
Author_Institution
Centre d´´Etudes Fondamentales, Perpignan Univ., France
Volume
42
Issue
6
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1622
Lastpage
1627
Abstract
An innovative method for power MOSFET´s characterization is presented. The radiation-induced degradation of structural parameters in the body-drain junction is shown to be related to the total dose. These results provide a new way, through these new parameters, to qualify the radiation response of power MOSFETs
Keywords
power MOSFET; semiconductor device testing; body-drain junction; characterization method; ionizing radiation degradation; power MOSFETs; radiation response; structural parameters; total dose; Circuits; Degradation; Diodes; Electron traps; Energy consumption; Ionizing radiation; MOSFETs; Photonic band gap; Structural engineering; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.488758
Filename
488758
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