Title :
8 Gb/s 8:1 multiplexer and 1:8 demultiplexer IC´s using GaAs DCFL circuit
Author :
Tanaka, Koutarou ; Shikata, Makoto ; Kimura, Tamotsu ; Sano, Yoshiaki ; Akiyama, Masahiro
Author_Institution :
Oki Electr. Ind., Co. Ltd., Tokyo, Japan
fDate :
10/1/1992 12:00:00 AM
Abstract :
High-speed 8:1 multiplexer and 1:8 demultiplexer ICs composed of GaAs direct-coupled FET logic (DCFL) have been designed and fabricated. The ICs were designed with a tree-type architecture and using memory-cell-type flip-flops (MCFFs). Self-aligned GaAs MESFETs with a gate length of 0.5 μm were used in these ICs. The propagation delay time of the DCFL inverter was 19.0 ps/gate. Both ICs operated up to 8 Gb/s with power dissipations of 1.5 W for the multiplexer and 1.9 W for the demultiplexer at a single power supply voltage of 2.0 V. These ICs are applicable for multigigabit lightwave communication systems
Keywords :
III-V semiconductors; demultiplexing equipment; direct coupled FET logic; field effect integrated circuits; gallium arsenide; multiplexing equipment; optical communication equipment; 0.5 micron; 1.5 W; 1.9 W; 19 ps; 1:8 demultiplexer; 8 Gbit/s; 8:1 multiplexer; DCFL circuit; DCFL inverter; GaAs; demultiplexer ICs; direct-coupled FET logic; gate length; memory-cell-type flip-flops; multigigabit lightwave communication systems; multiplexer IC; power dissipations; propagation delay; self aligned MESFET; tree-type architecture; FETs; Flip-flops; Gallium arsenide; Inverters; Logic design; MESFETs; Memory architecture; Multiplexing; Power dissipation; Propagation delay;
Journal_Title :
Solid-State Circuits, IEEE Journal of
