Title :
Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors
Author :
Belyakov, V.V. ; Pershenkov, V.S. ; Shalnov, A.V. ; Shvetzov-Shilovsky, I.N.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
fDate :
12/1/1995 12:00:00 AM
Abstract :
A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron traps in oxide. The experimental results on positive charge build-up at low dose-rates and small electric field in oxide are presented. The use of an MOS transistor in bipolar mode for investigation of surface peripheral recombination current in bipolar transistors and extraction of MOS structure physical parameters is described
Keywords :
MOSFET; bipolar transistors; electron traps; radiation effects; surface recombination; MOS structures; MOS transistors; bipolar transistors; electric field; irradiation response; low-dose-rate effects; oxide; positive charge build-up; shallow electron traps; surface peripheral recombination current; Annealing; Bipolar transistors; Degradation; Electron traps; Extraterrestrial measurements; MOSFETs; Metastasis; Physics; Spontaneous emission; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
