DocumentCode
777784
Title
Effect of rapid thermal annealing on radiation hardening of MOS devices
Author
Flament, O. ; Leray, J.L. ; Martin, F. ; Orsier, E. ; Pelloie, J.L. ; Truche, R. ; Devine, R.A.B.
Author_Institution
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Volume
42
Issue
6
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1667
Lastpage
1673
Abstract
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected. Data are in good agreement with a recently developed model of oxygen out-diffusion, (ii) the location across the wafer with a radial dependence. Results could be related to stress induced by thermal gradient
Keywords
MOSFET; X-ray effects; radiation hardening (electronics); rapid thermal annealing; MOS devices; NMOS transistors; PMOS transistors; oxide trapped charge; oxygen out-diffusion; radiation hardening; rapid thermal annealing; stress; thermal gradient; CMOS process; CMOS technology; Furnaces; MOS devices; MOSFETs; Radiation hardening; Rapid thermal annealing; Rapid thermal processing; Temperature; Thermal stresses;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.488764
Filename
488764
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