Title :
Electron spin resonance evidence that E´γ centers can behave as switching oxide traps
Author :
Conley, John F., Jr. ; Lenahan, Patrick M. ; Lelis, Aivars J. ; Oldham, Timothy R.
Author_Institution :
Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide tap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E´γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps
Keywords :
MOSFET; defect states; elemental semiconductors; hole traps; paramagnetic resonance; semiconductor device models; silicon; silicon compounds; E´γ centers; Si-SiO2; charge state; electron spin resonance; gate oxides; metal-oxide-semiconductor field-effect-transistor; spectroscopic evidence; switching oxide traps; Amorphous materials; Annealing; Charge carrier processes; Electron traps; Insulation; Laboratories; Paramagnetic resonance; Spectroscopy; Switches; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
