Title :
High-energy heavy-ion-induced charge transport across multiple junctions
Author :
Dussault, H. ; Howard, J.W., Jr. ; Block, R.C. ; Stapor, W.J. ; Knudson, A.R. ; McDonald, P.T. ; Pinto, M.R.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
High-energy heavy ion experiments and numerical simulations show that two or more junctions bridged by an ion track respond in a coupled manner. The potential difference across the structure strongly affects the amount of charge collected at each of the junctions. Experiments with 1.7 GeV 197Au ions indicate that, for emitter biases less than or equal to 0.0 volts and potential differences of 5 or more volts, more charge may be collected at a junction than was initially deposited by the ion. Simulations show that, when an ion track intersects multiple junctions of a device, the responses of the individual junctions cannot be modeled independently of each other. Simulation and experimental results indicate that charge transport in a multiple junction structure cannot be modeled using simple geometry or funneling assumptions
Keywords :
bipolar transistors; ion beam effects; semiconductor device models; transient analysis; transients; 1.7 GeV; 197Au ions; N+PN multiple junction test structure; bipolar transistor test structure; charge collection; emitter bias; funneling assumption; high-energy heavy-ion-induced charge transport; ion track bridge; junction response modeling; multiple junctions; numerical simulations; potential difference; transient currents; Bipolar transistors; Circuit simulation; Integrated circuit modeling; Microelectronics; Numerical simulation; Semiconductor device doping; Silicon; Solid modeling; Substrates; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on