DocumentCode
777966
Title
SEE results using high energy ions
Author
Duzellier, S. ; Falguère, D. ; Moulière, L. ; Ecoffet, R. ; Buisson, J.
Author_Institution
CERT-ONERA, Toulouse, France
Volume
42
Issue
6
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1797
Lastpage
1802
Abstract
SEE data on SRAMs and DRAMs, obtained with low and high energy ions, are presented. The global response of these devices remained coherent using low or high energy beams (angle effects, pattern influences, multiple-bit error proportion, etc.), but discrepancies appeared, in some cases, in the threshold part of the sensitivity curves. These anomalies seem in relation with a track structure
Keywords
DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; space vehicle electronics; 256 kbit to 16 Mbit; 84 MeV to 33.6 GeV; DRAMs; LET threshold; SEE data; SEU; SRAMs; angle effects; global response; high energy ions; low energy ions; multiple-bit error proportion; onboard electronic subsystems; pattern influences; sensitivity curve threshold region; simulated galactic cosmic rays; track structure; Circuits; Cosmic rays; Costs; Electron accelerators; Electronic components; Electronic equipment testing; Life estimation; Particle accelerators; Qualifications; Random access memory;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.488781
Filename
488781
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