Title :
Obliquely sputtered TbFe giant magnetostrictive films with in-plane anisotropy
Author :
Jiang, H.C. ; Zhang, W.L. ; Peng, B. ; Zhang, W.X. ; Yang, S.Q.
Author_Institution :
Coll. of Microelectron. & Solid State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
4/1/2005 12:00:00 AM
Abstract :
We have found that in-plane magnetostriction characteristics at low fields can be greatly improved by an oblique sputtering technique. We report a study of deposition of in-plane anisotropic TbFe giant magnetostrictive films by dc magnetron oblique sputtering, including the influences of deposition angle on TbFe film magnetic and magnetostrictive performances. The in-plane magnetization of TbFe films at 1600 kA/m is drastically increased with a change of deposition angles from 90° to 15°. Magnetic domain structures explored by magnetic force microscopy indicate that the easy magnetization directions of the films can be gradually changed from perpendicular to the film plane at sufficiently shallow deposition angles. The in-plane magnetostrictive coefficients λ at 16 kA/m also can be increased by decreasing the deposition angles from 90° to 15°. The significant variation in the in-plane magnetic and magnetostrictive performances can be explained by the decrease of perpendicular anisotropy of TbFe films.
Keywords :
giant magnetoresistance; magnetic domains; magnetic force microscopy; perpendicular magnetic anisotropy; sputter deposition; terbium alloys; TbFe; dc magnetron oblique sputtering; deposition angle; giant magnetostrictive films; in-plane anisotropy; in-plane magnetostriction; magnetic domain structures; magnetic force microscopy; magnetic performance; perpendicular anisotropy; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic domains; Magnetic films; Magnetic force microscopy; Magnetic forces; Magnetization; Magnetostriction; Perpendicular magnetic anisotropy; Sputtering; Deposition angle; TbFe films; giant magnetostriction; oblique sputtering;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.844836