Title :
Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons
Author :
Normand, E. ; Oberg, D.L. ; Wert, J.L. ; Majewski, P.P. ; Woffinden, G.A. ; Satoh, S. ; Sasaki, K. ; Tverskoy, M.G. ; Miroshkin, V.V. ; Goleminov, N. ; Wender, S.A. ; Gavron, A.
Author_Institution :
Boeing Defense & Space Group, Seattle, WA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated circuit measurement; neutron effects; photodiodes; proton effects; silicon; silicon radiation detectors; 154 to 3650 MeV; InGaAs; InGaAs photodiodes; Si; Si surface barrier detectors; charge collection measurements; energetic neutron irradiation; energetic proton irradiation; small Si junctions; small Si subvolumes; Charge measurement; Current measurement; Energy measurement; Indium gallium arsenide; Laboratories; Neutrons; Photodiodes; Protons; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
