• DocumentCode
    777994
  • Title

    Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

  • Author

    Normand, E. ; Oberg, D.L. ; Wert, J.L. ; Majewski, P.P. ; Woffinden, G.A. ; Satoh, S. ; Sasaki, K. ; Tverskoy, M.G. ; Miroshkin, V.V. ; Goleminov, N. ; Wender, S.A. ; Gavron, A.

  • Author_Institution
    Boeing Defense & Space Group, Seattle, WA, USA
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    1815
  • Lastpage
    1822
  • Abstract
    A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated circuit measurement; neutron effects; photodiodes; proton effects; silicon; silicon radiation detectors; 154 to 3650 MeV; InGaAs; InGaAs photodiodes; Si; Si surface barrier detectors; charge collection measurements; energetic neutron irradiation; energetic proton irradiation; small Si junctions; small Si subvolumes; Charge measurement; Current measurement; Energy measurement; Indium gallium arsenide; Laboratories; Neutrons; Photodiodes; Protons; Silicon; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.488784
  • Filename
    488784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=777994