Title :
Diode-HBT-logic circuits monolithically integrable with ECl/CML circuits
Author :
Wang, Keh-Chung ; Beccue, Steve M. ; Chang, Mau-Chung F. ; Nubling, Randall B. ; Cappon, Arthur M. ; Tsen, Tom C -T ; Chen, Dong Ming ; Asbeck, Peter M. ; Kwok, Chung Y.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
A novel logic approach, diode-HBT logic (DHL), that is implemented with GaAlAs/GaAs HBTs and Schottky diodes to provide high-density and low-power digital circuit operation is described. This logic family was realized with the same technology used to produce emitter-coupled-logic/current-mode-logic (ECL/CML) circuits. The logic operation was demonstrated with a 19-stage ring oscillator and a frequency divider. A gate delay of 160 ps was measured with 1.1 mW of power per gate. The divider worked properly up to 6 GHz. Layouts of a DHL flip-flop and divider showed that circuit area and transistor count can be reduced by about a factor of 3, relative to ECL/CML circuits. The new logic approach allows monolithic integration of high-speed ECL/CML circuits with high-density DHL circuits with high-density DHL circuits
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; flip-flops; frequency dividers; gallium arsenide; integrated logic circuits; 1.1 mW; 160 ps; 19-stage ring oscillator; 6 GHz; GaAlAs-GaAs; Schottky diodes; circuit area; diode-HBT logic; flip-flop; frequency divider; gate delay; high-speed ECL/CML circuits; logic circuits; logic family; low-power digital circuit operation; monolithic integration; transistor count; DH-HEMTs; Delay; Digital circuits; Flip-flops; Frequency conversion; Gallium arsenide; Logic circuits; Power measurement; Ring oscillators; Schottky diodes;
Journal_Title :
Solid-State Circuits, IEEE Journal of
