Title :
High-performance long-wavelength InGaAs=GaAs multiple quantum-well lasers grown by molecular beam epitaxy
Author :
Adolfsson, G. ; Wang, S.M. ; Sadeghi, M. ; Larsson, A.
Author_Institution :
Dept. of Microelectron. & Nanoscience, Chalmers Univ. of Technol., Goteborg
Abstract :
High-quality 1.2 mum InGaAs/GaAs single and triple quantum-well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2 /well is achieved for a 100 times1000 mum laser
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; 1.2 micron; InGaAs-GaAs; high-performance long-wavelength GaAs multiple quantum-well lasers; molecular beam epitaxy; threshold current density; triple quantum-well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070279
