Title :
40 Gbit=s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer
Author :
Shimizu, S. ; Shiba, K. ; Nakata, T. ; Kasahara, K. ; Makita, K.
Author_Institution :
Dept. of Photonics, Ritsumeikan Univ., Kusatsu Shiga
Abstract :
Waveguide avalanche photodiodes exhibiting both wide bandwidth and high gain bandwidth product have been developed. An absorption layer includes a p-type quasi-field-formed layer and a multiplication layer consists of InAlAs with a low ionisation rate ratio. Optimisation of the design yielded superior performance such as a wide bandwidth of 36.5 GHz, a gain band width of 170 GHz and a high quantum efficiency of 0.75 A/W
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; light absorption; 170 GHz; 36.5 GHz; 40 Gbit/s; InAlAs; p-type absorption layer; p-type quasifield-formed layer; thin InAlAs multiplication layer; waveguide avalanche photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070344
