• DocumentCode
    778253
  • Title

    Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

  • Author

    Yilmazoglu, O. ; Mutamba, K. ; Pavlidis, D. ; Karaduman, T.

  • Author_Institution
    Dept. of High Frequency Electron., Tech. Univ. Darmstadt
  • Volume
    43
  • Issue
    8
  • fYear
    2007
  • Firstpage
    480
  • Lastpage
    482
  • Abstract
    Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (vD) was estimated to be 1.9times107 cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device
  • Keywords
    Gunn diodes; III-V semiconductors; gallium compounds; substrates; GaN-GaN; Gunn diodes; current-voltage characteristics; negative differential resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070658
  • Filename
    4155613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=778253