Title :
3-D numerical modeling of thermal flow for insulating thin film using surface diffusion
Author :
Fujinaga, M. ; Tottori, I. ; Kunikiyo, T. ; Uchida, T. ; Kotani, N. ; Tsukamoto, K.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan
fDate :
5/1/1995 12:00:00 AM
Abstract :
This paper presents a three-dimensional (3-D) numerical surface diffusion model of BPSG glass flow of surface tension. The analysis region is divided into small cubic cells. Material surface is described as an equi-concentration (equi-existence rate) area which is obtained by linear interpolation between the cells. 3-D surface curvature is defined as the ratio of the increment of surface area to that of volume in a small interface area. Flux of flow is proportional to gradient of the surface curvature, and the direction is from positions of larger curvature to that of small curvature. The flow algorithm is that particles move from the mass-center of the equi-concentration area of a cell to that of the neighbor cells across the contact lines of the cell boundary and the equi-concentration area. This paper presents two 3-D simulations of flow which show that this model can be applied for not only cylindrical symmetry but also general 3-D topography. Also, the surface diffusion coefficient for the total concentration (Cimp : P2O5 and B2O3) is derived using the model by fitting 2-D simulations to the experiments at 850°C
Keywords :
ULSI; borosilicate glasses; digital simulation; film flow; insulating thin films; numerical analysis; phosphosilicate glasses; semiconductor process modelling; surface diffusion; surface topography; 3D numerical modeling; 3D surface curvature; 850 degC; B2O3-P2O5-SiO2; BPSG; BPSG glass flow; ULSI; contact lines; cubic cells; cylindrical symmetry; equi-concentration area; insulating thin film; linear interpolation; neighbor cells; surface diffusion; surface topography; thermal flow; topography simulation; Circuit simulation; Computational modeling; Glass; Insulation; Numerical models; Surface fitting; Surface tension; Surface topography; Transistors; Ultra large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on