DocumentCode
778451
Title
Development of highly dense four-stage flat-gain 1-W 6-18-GHz MMIC power amplifier chip
Author
Platzker, Aryeh ; Hetzler, Keith T. ; Cole, J. Bradford
Author_Institution
Raytheon Co., Lexington, MA, USA
Volume
27
Issue
10
fYear
1992
fDate
10/1/1992 12:00:00 AM
Firstpage
1405
Lastpage
1412
Abstract
A state-of-the-art dual-channel four-stage MMIC power chip operating over C -X -Ku bands has been produced. The chip, which is only 4.35 mm×5.1 mm, operates over 6-17 GHz with very small gain ripple. At 25°C each one of its channels provides 29.5±0.5 dBm at 2-dB compression (2 dBc) from a small-signal gain of 19.5±1.5 dB. The drain bias is 7 V. and the power added efficiency is 11-14%. At 85°C, power and gain decrease by 0.5-1 and 3.5-4 dB, respectively. The design was iterated once to produce an all-monolithic amplifier chip that operates over the full 6-18-GHz frequency band and provides more than 1 W at 18 GHz. The architecture and size were maintained in the iterated design. The excellent power and gain ripple performances of the C -X -Ku chip extended to 18 GHz with a small-signal gain reduction of 0.5-1 dB. The chip is designed for use with inputs and outputs coupled externally for additional 2-2.5 dB of power. Excellent performance over 6-18 GHz was achieved using Lange couplers on 10-mil alumina
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; 1 W; 11 to 14 percent; 19.5 dB; 6 to 18 GHz; C-band; Ku-band; Lange couplers; MESFET; MMIC; SHF; X-band; four stage design; power amplifier chip; Capacitors; Couplers; Frequency; Gain measurement; High power amplifiers; Impedance matching; MMICs; Performance gain; Semiconductor device measurement; Wideband;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.156444
Filename
156444
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