Theoretical study on SAW characteristics of layered structures including a diamond layer

Author

Nakahata, Hideaki ; Hachigo, Akihiro ; Higaki, Kenjiro ; Fujii, Shohei ; Shikata, Shin-Ichi ; Fujimori, Naoji

Author_Institution

Res. Labs., Sumitomo Electr. Ind. Ltd., Itami, Japan

Volume

42

Issue

3

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

362

Lastpage

375

Abstract

Diamond has the highest surface acoustic wave (SAW) velocity among all materials and thus can provide much advantage for fabrication of high frequency SAW devices when it is combined with a piezoelectric thin film. Basic SAW properties of layered structures consisting of a piezoelectric material layer, a diamond layer and a substrate were examined by theoretical calculation. Rayleigh mode SAW´s with large SAW velocities up to 12,000 m/s and large electro-mechanical coupling coefficients from 1 to 11% were found to propagate in ZnO/diamond/Si, LiNbO/sub 3//diamond/Si and LiTaO/sub 3//diamond/Si structures. It was also found that a SiO/sub 2//ZnO/diamond/Si structure can realize a zero temperature coefficient of frequency with a high phase velocity of 8,000-9,000 m/s and a large electro-mechanical coupling coefficient of up to 4%.<>

Keywords

Rayleigh waves; acoustic materials; diamond; elemental semiconductors; lithium compounds; piezoelectric thin films; silicon; surface acoustic wave devices; ultrasonic velocity; zinc compounds; 12000 m/s; 8000 to 9000 m/s; LiNbO/sub 3/-C-Si; LiTaO/sub 3/-C-Si; Rayleigh mode; SAW characteristics; SAW velocity; Si; SiO/sub 2/-ZnO-C-Si; ZnO-C-Si; diamond layer; electro-mechanical coupling coefficients; high frequency SAW devices; layered structures; phase velocity; piezoelectric thin film; zero temperature coefficient; Acoustic materials; Acoustic waves; Fabrication; Frequency; Piezoelectric films; Piezoelectric materials; Substrates; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.384444

Filename

384444