Title :
Total radiation dose at geostationary orbit
Author :
Bhat, B. Ravinarayana ; Upadhyaya, Nagesh ; Kulkarni, Ravi
Author_Institution :
Components Div., Indian Space Res. Organ., Bangalore, India
fDate :
4/1/2005 12:00:00 AM
Abstract :
Active semiconductor components in satellites are sensitive to accumulated ionization radiation dose. Radiation dose and shielding estimations for electronic components are usually carried out using NASA models of space radiation particle flux. Accurate measurement of accumulated dose during the life of a satellite is essential for optimizing radiation shielding design for electronic components. Dosimeters were designed using radiation sensitive field-effect transistors (RADFETs) and accumulated dose at geostationary orbit was measured. Radiation dose as measured by these dosimeters with spherical aluminum shields are presented and compared with NASA model doses.
Keywords :
artificial satellites; dosimetry; field effect transistors; radiation effects; NASA models; RADFETs; active semiconductor components; dosimeters; electronic components; geostationary orbit; radiation sensitive field-effect transistors; satellites; shielding estimations; space radiation particle flux; spherical aluminum shields; total ionisation radiation dose; Aluminum; Electronic components; Extraterrestrial measurements; FETs; Ionization; Ionizing radiation; MOSFET circuits; NASA; Satellites; Threshold voltage; Geostationary orbit; radiation sensitive field-effect transistor (RADFET); space radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.846881