Interband nonlinear optical generation in presence of intersubband light in asymmetric quantum wells

Author

Neogi, Amp ; Takahashi, Yutaka ; Kawaguchi, Hitoshi

Author_Institution

Fac. of Eng., Yamagata Univ., Japan

Volume

32

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

701

Lastpage

711

Abstract

The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility χ_c2-h1⁽²⁾ arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field

Keywords

carrier density; conduction bands; multiwave mixing; nonlinear optical susceptibility; optical frequency conversion; perturbation techniques; semiconductor quantum wells; asymmetric quantum wells; carrier density level; heavy hole state; interband coupling; interband nonlinear optical generation; interband sum frequency generation process; intersubband coupling; intersubband field; intersubband light; nonlinear process; optical transition; perturbational density matrix approach; second conduction subband; second-order susceptibility; semiconductor quantum well; three-wave interaction; Conducting materials; Frequency conversion; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical harmonic generation; Optical materials; Optical superlattices; Photonic band gap; Resonance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.488845

Filename

488845