Title :
A physical analytical model of multilayer on-chip inductors
Author :
Tong, K.Y. ; Tsui, C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., China
fDate :
4/1/2005 12:00:00 AM
Abstract :
An analytical model of multilayer on-chip inductors for CMOS integrated circuits based on physical principles has been developed. It provides accurate prediction of the self-resonant frequency, and eddy-current losses in the metal and Si substrate, as compared with experimental and numerical simulation results. The model includes improvements in the evaluation of eddy currents in metals caused by the proximity effect, and the equivalent capacitances in multilayer inductors. The Q factors deduced from the model agree well with experimental and numerical simulation results for multilayer inductors over a wide range of frequencies and widths of metal segments.
Keywords :
CMOS integrated circuits; Q-factor; inductors; multilayers; system-on-chip; CMOS integrated circuits; Q factors; RF integrated circuits; eddy current; equivalent capacitances; inductor model; multilayer inductors; multilayer on-chip inductors; proximity effect; self-resonant frequency; Analytical models; CMOS integrated circuits; Capacitance; Eddy currents; Frequency; Inductors; Nonhomogeneous media; Numerical simulation; Proximity effect; Semiconductor device modeling; Eddy currents; RF integrated circuits (ICs); inductor model; on-chip inductors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.845721
