A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT

Author

Nakamura, Makoto ; Imai, Yuhki ; Sano, Eiichi ; Yamauchi, Yoshiki ; Nakajima, Osaake

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

27

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1421

Lastpage

1427

Abstract

The design and performance of an AlGaAs/GaAs HBT limiting amplifier are presented. It is revealed that the main cause of phase shift deviation in a limiting amplifier is the bias dependence of the input capacitance, which is the dominant nonlinear factor in a transistor. A circuit design featuring a differential configuration with an emitter peaking technique lowers phase deviation and widens the frequency band. The device achieves high-frequency operation of 15 GHz with a low phase shift deviation of 3° over a 15-dB input dynamic range

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; 15 GHz; AlGaAs-GaAs; HBT; SHF; bias dependence; differential configuration; emitter peaking technique; high-frequency operation; input capacitance; limiting amplifier; low phase deviation; phase shift deviation; Capacitance; Circuits; Clocks; Dynamic range; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers; Optical resonators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.156446

Filename

156446