Title :
A limiting amplifier with low phase deviation using an AlGaAs/GaAs HBT
Author :
Nakamura, Makoto ; Imai, Yuhki ; Sano, Eiichi ; Yamauchi, Yoshiki ; Nakajima, Osaake
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
10/1/1992 12:00:00 AM
Abstract :
The design and performance of an AlGaAs/GaAs HBT limiting amplifier are presented. It is revealed that the main cause of phase shift deviation in a limiting amplifier is the bias dependence of the input capacitance, which is the dominant nonlinear factor in a transistor. A circuit design featuring a differential configuration with an emitter peaking technique lowers phase deviation and widens the frequency band. The device achieves high-frequency operation of 15 GHz with a low phase shift deviation of 3° over a 15-dB input dynamic range
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; 15 GHz; AlGaAs-GaAs; HBT; SHF; bias dependence; differential configuration; emitter peaking technique; high-frequency operation; input capacitance; limiting amplifier; low phase deviation; phase shift deviation; Capacitance; Circuits; Clocks; Dynamic range; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers; Optical resonators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
