Title :
200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers
Author :
Morgan, R.A. ; Hibbs-Brenner, M.K. ; Marta, T.M. ; Walterson, R.A. ; Bounnak, S. ; Kalweit, E.L. ; Lehman, J.A.
Author_Institution :
Honeywell Technol. Center, Bloomington, MN, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
We report record temperature and wavelength range attained using MOVPE-grown AlGaAs vertical cavity surface-emitting lasers (VCSEL´s). Unbonded continuous-wave lasing is achieved at temperatures up to 200/spl deg/C from these top-emitting VCSEL´s and operation over a 96-nm wavelength regime near 850 nm is also achieved from the same nominal design. Temperature and wavelength insensitive operation is also demonstrated; threshold current is controlled to within a factor of 2 (2.5-5 mA) for a wavelength range exceeding 50 nm and to within /spl plusmn/30% (5-10 mA) for a temperature range of 190/spl deg/C at 870 nm.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor growth; semiconductor lasers; sensitivity; surface emitting lasers; vapour phase epitaxial growth; 2.5 to 5 mA; 200 C; 850 nm; 96 nm; AlGaAs; AlGaAs vertical cavity surface-emitting lasers; GaAs; MOVPE-grown vertical cavity surface-emitting lasers; continuous-wave lasing; temperature range; threshold current; top-emitting VCSEL´s; unbonded GaAs; wavelength insensitive operation; wavelength range; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Surface emitting lasers; Surface waves; Temperature distribution; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
