Title :
5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMTs
Author :
Yuen, C. ; Pao, Y.C. ; Bechtel, N.G.
Author_Institution :
Litton, Santa Clara, CA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
A high-gain InP MMIC cascode distributed amplifier was developed which has 12 dB of gain from 5 to 60 GHz with over 20-dB gain control capability and a noise figure of 2.5-4 dB in the Ka band. Lattice-matched InAlAs/InGaAs cascode HEMTs on InP substrate with 0.25-μm gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimension of 2.3 mm×0.9 mm. The gain/noise figure advantages of the InP HEMT over the AlGaAs HEMT and the superior gain performance of the cascode HEMT over the common-source HEMT are demonstrated
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 0.25 micron; 12 dB; 2.5 to 4 dB; 5 to 60 GHz; InAlAs-InGaAs-InP; InP substrate; Ka band; MMIC; cascode HEMTs; distributed amplifier; gain control capability; high-gain; microstrip; Distributed amplifiers; Gain control; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Noise figure; Performance gain;
Journal_Title :
Solid-State Circuits, IEEE Journal of
