Title :
1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer
Author :
Godefroy, A. ; Le Corre, A. ; Clerot, F. ; Salaun, S. ; Loualiche, S. ; Simon, J.C. ; Henry, Leanne ; Vaudry, C. ; Keromnes, J.C. ; Joulie, G. ; Lamouler, P.
Author_Institution :
CNET Lab., France Telecom, Lannion, France
fDate :
5/1/1995 12:00:00 AM
Abstract :
A polarization insensitive (sensitivity <1 dB) GaInAs-GaInAsP semiconductor optical amplifier has been realized at 1.55 μm. The active layer consists of a strain-balanced superlattice structure. Gain polarization insensitivity on a large bandwidth (60 nm) together with a 22.5-dB signal gain and a 11-dBm polarization-insensitive saturation output power are obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; optical saturation; quantum well lasers; semiconductor superlattices; sensitivity; 1.55 mum; 22.5 dB; GaInAs-GaInAsP; GaInAs-GaInAsP semiconductor optical amplifier; active layer; gain polarization insensitivity; large bandwidth; polarization-insensitive optical amplifier; polarization-insensitive saturation output power; quantum well lasers; signal gain; strain-balanced superlattice active layer; strain-balanced superlattice structure; Bandwidth; Optical amplifiers; Optical polarization; Optical saturation; Optical sensors; Optical superlattices; Power generation; Semiconductor optical amplifiers; Semiconductor superlattices; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
