DocumentCode
778849
Title
A 5-Vp-p 100-ps GaAs pulse amplifier IC with improved pulse fidelity
Author
Armstrong, Allan ; Wagner, Hans-Jürgen
Author_Institution
Hewlett-Packard Co., Santa Rosa, CA, USA
Volume
27
Issue
10
fYear
1992
fDate
10/1/1992 12:00:00 AM
Firstpage
1476
Lastpage
1481
Abstract
A GaAs differential pulse amplifier IC has been designed, fabricated, and tested which delivers 5 V peak to peak into 25 Ω with a 20-80% transition time of 100 ps and overshoot of less than 10%. The IC includes a continuously variable output attenuator, which allows the output amplitude to be adjusted between 0.1 and 5 V peak to peak with minimal effect on output transition time and overshoot. The IC exhibits no incomplete switching transients at the output. Circuit design techniques to minimize overshoot and avoid incomplete switching transients are explained and experimental data are supplied to support performance claims
Keywords
III-V semiconductors; differential amplifiers; field effect integrated circuits; gallium arsenide; pulse amplifiers; 100 ps; 5 V; GaAs; continuously variable output attenuator; depletion-mode MESFET IC; differential pulse amplifier IC; switching transients; Differential amplifiers; Electrodes; Gallium arsenide; Optical amplifiers; Optical pulses; Pulse amplifiers; Pulse measurements; Pulse modulation; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.156457
Filename
156457
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