Title :
High-frequency high-power static induction transistor
Author :
Tatsuta, M. ; Yamanaka, E.Y. ; Nishizawa, J.
Author_Institution :
Tokin Corp., Sendai, Japan
Abstract :
This article demonstrates the characteristics, physical construction, and application for a newly commercialized high-frequency static induction transistor (SIT). The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. The new high-frequency SIT device is being applied in applications such as medium wavelength radio transmitters and induction heaters
Keywords :
capacitance; electric breakdown; induction heating; power transistors; radio transmitters; static induction transistors; breakdown voltage increase; capacitance lowering; gate-to-drain capacitance; gate-to-source capacitance; high-frequency; high-power; induction heaters; medium wavelength radio transmitters; power rating increase; static induction transistor; Commercialization; Induction generators; Manufacturing; Power generation; Power supplies; Radio transmitters; Refining; Surges; Temperature; Voltage;
Journal_Title :
Industry Applications Magazine, IEEE
DOI :
10.1109/2943.384626
