A temperature noise model for extrinsic FETs

Author

Hughes, Brian

Author_Institution

Hewlett-Packard, Santa Rosa, CA, USA

Volume

40

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

1821

Lastpage

1832

Abstract

A resistor temperature noise model for FETs has been successfully applied to extrinsic FETs to predict the frequency dependence of minimum noise figure F_min and associated gain G_Aopt. The model gives a fixed relationship between F_min and G_Aopt with one fitting parameter T_d. An extensive comparison to published results shows that the majority of FETs can be modeled with effective T_d values (the temperature of the output resistor) between 300 and 700 K for all of the frequencies (8 to 94 GHz), gate lengths (0.8 to 0.1 μm), and material types examined. The analysis shows that InP-based MODFETs exhibit significantly lower F_min and higher G_Aopt than conventional and pseudomorphic GaAs-based MODFETs of the same gate length. The results suggest a high F_max is a key factor for low noise figure

Keywords

electron device noise; equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; 0.8 to 1 micron; 300 to 700 K; 8 to 94 GHz; GaAs; InP; MESFET; MODFETs; extrinsic FETs; frequency dependence; gain; minimum noise figure; temperature noise model; Circuit noise; FETs; Frequency dependence; Frequency measurement; HEMTs; MODFETs; Noise figure; Predictive models; Resistors; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.156610

Filename

156610