• DocumentCode
    779944
  • Title

    Improved thermal management with reliability banking

  • Author

    Lu, Zhijian ; Lach, John ; Stan, Mircea R. ; Skadron, Kevin

  • Author_Institution
    Charles L. Brown Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA, USA
  • Volume
    25
  • Issue
    6
  • fYear
    2005
  • Firstpage
    40
  • Lastpage
    49
  • Abstract
    Using a fixed temperature for thermal throttling is pessimistic. Reduced aging during periods of low temperature can compensate for accelerated aging during periods of high temperature. Runtime tracking of the temperature-dependent aging rate means that throttling is engaged only when necessary to maintain reliability. In this article, we show that the effect of cool (low-temperature) phases can compensate for that of hot (high-temperature) phases on reliability. Existing dynamic thermal management (DTM) techniques ignore the effects of temperature fluctuations on chip lifetime and can unnecessarily impose performance penalties for hot phases. Using electromigration as the targeted failure mechanism, we apply a dynamic reliability model and propose a dynamic reliability management (DRM) technique to dynamically track the consumption of chip lifetime during operation.
  • Keywords
    electromigration; integrated circuit design; integrated circuit reliability; microprocessor chips; chip lifetime; dynamic reliability management; dynamic thermal management; electromigration; reliability banking; temperature fluctuations; temperature-dependent aging rate; Accelerated aging; Banking; Electromigration; Failure analysis; Fluctuations; Maintenance; Runtime; Target tracking; Temperature; Thermal management; Analytical and simulation techniques; Dynamic thermal/reliability management; Electromigration; Modeling; Performability;
  • fLanguage
    English
  • Journal_Title
    Micro, IEEE
  • Publisher
    ieee
  • ISSN
    0272-1732
  • Type

    jour

  • DOI
    10.1109/MM.2005.114
  • Filename
    1566555