DocumentCode
779944
Title
Improved thermal management with reliability banking
Author
Lu, Zhijian ; Lach, John ; Stan, Mircea R. ; Skadron, Kevin
Author_Institution
Charles L. Brown Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA, USA
Volume
25
Issue
6
fYear
2005
Firstpage
40
Lastpage
49
Abstract
Using a fixed temperature for thermal throttling is pessimistic. Reduced aging during periods of low temperature can compensate for accelerated aging during periods of high temperature. Runtime tracking of the temperature-dependent aging rate means that throttling is engaged only when necessary to maintain reliability. In this article, we show that the effect of cool (low-temperature) phases can compensate for that of hot (high-temperature) phases on reliability. Existing dynamic thermal management (DTM) techniques ignore the effects of temperature fluctuations on chip lifetime and can unnecessarily impose performance penalties for hot phases. Using electromigration as the targeted failure mechanism, we apply a dynamic reliability model and propose a dynamic reliability management (DRM) technique to dynamically track the consumption of chip lifetime during operation.
Keywords
electromigration; integrated circuit design; integrated circuit reliability; microprocessor chips; chip lifetime; dynamic reliability management; dynamic thermal management; electromigration; reliability banking; temperature fluctuations; temperature-dependent aging rate; Accelerated aging; Banking; Electromigration; Failure analysis; Fluctuations; Maintenance; Runtime; Target tracking; Temperature; Thermal management; Analytical and simulation techniques; Dynamic thermal/reliability management; Electromigration; Modeling; Performability;
fLanguage
English
Journal_Title
Micro, IEEE
Publisher
ieee
ISSN
0272-1732
Type
jour
DOI
10.1109/MM.2005.114
Filename
1566555
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