Author :
Kettler, T. ; Posilovic, K. ; Schulz, O. ; Karachinsky, L.Ya. ; Novikov, I.I. ; Shernyakov, Yu.M. ; Kuznetsov, S.M. ; Gordeev, N.Yu. ; Maximov, M.V. ; Ben-Ami, U. ; Sharon, A. ; Mikhrin, S.S. ; Kovsh, A.R. ; Shchukin, Vitaly A. ; Kop´ev, P.S. ; Ledentsov,
Abstract :
GaAs/AlGaAs 850 nm range lasers based on a longitudinal photonic bandgap crystal waveguide show narrow vertical far-field pattern. Vertical and lateral beam divergence with FWHM below 10deg and 5deg, respectively, is demonstrated for 4 mum stripe width, being independent on injection current. Excellent beam quality with M2 =1.4, low internal losses of 1.4 cm-1 and high differential quantum efficiency of 83% are observed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; photonic band gap; semiconductor lasers; 83 percent; 850 nm; FWHM; GaAs-AlGaAs; differential quantum efficiency; injection current; lateral beam divergence; longitudinal photonic bandgap crystal waveguide; narrow beam divergence; semiconductor lasers; single transverse mode lasers; vertical beam divergence; vertical far-field pattern;
