DocumentCode
780070
Title
10 Gbit/s asymmetric waveguide APD with high sensitivity of -30dBm
Author
Shiba, Kazutoshi ; Nakata, Tatsuya ; Takeuchi, T. ; Sasaki, T. ; Makita, Kikuo
Author_Institution
Syst. Devices Res. Labs., NEC Corp., Ohtsu Shiga
Volume
42
Issue
20
fYear
2006
fDate
9/28/2006 12:00:00 AM
Firstpage
1177
Lastpage
1178
Abstract
An asymmetric waveguide avalanche photodiode (APD) has been developed. Asymmetric waveguide structures are effective for achieving robustness under high input power operations, and high quantum efficiencies of 94% for 1.55 mum and 90% for 1.31 mum were achieved. A gain-bandwidth product of 110 GHz and a maximum 3 dB-down bandwidth of 20 GHz were also achieved. A high receiver sensitivity of -30.2 dBm at 10 Gbit/s for a receiver module with integrated TIA has also been demonstrated
Keywords
avalanche photodiodes; integrated optoelectronics; optical receivers; optical waveguide components; 1.31 micron; 1.55 micron; 10 Gbit/s; 110 GHz; 20 GHz; asymmetric waveguide; avalanche photodiode; high input power operations; high quantum efficiencies; integrated transimpedance amplifier; receiver sensitivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20061700
Filename
1706044
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