Title :
10 Gbit/s asymmetric waveguide APD with high sensitivity of -30dBm
Author :
Shiba, Kazutoshi ; Nakata, Tatsuya ; Takeuchi, T. ; Sasaki, T. ; Makita, Kikuo
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Ohtsu Shiga
fDate :
9/28/2006 12:00:00 AM
Abstract :
An asymmetric waveguide avalanche photodiode (APD) has been developed. Asymmetric waveguide structures are effective for achieving robustness under high input power operations, and high quantum efficiencies of 94% for 1.55 mum and 90% for 1.31 mum were achieved. A gain-bandwidth product of 110 GHz and a maximum 3 dB-down bandwidth of 20 GHz were also achieved. A high receiver sensitivity of -30.2 dBm at 10 Gbit/s for a receiver module with integrated TIA has also been demonstrated
Keywords :
avalanche photodiodes; integrated optoelectronics; optical receivers; optical waveguide components; 1.31 micron; 1.55 micron; 10 Gbit/s; 110 GHz; 20 GHz; asymmetric waveguide; avalanche photodiode; high input power operations; high quantum efficiencies; integrated transimpedance amplifier; receiver sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061700