Title :
Characteristics of 0.2 /spl mu/m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs
Author :
Kim, Tae-Woo ; Kim, Do-Hyeon ; Shin, Soo-Hwan ; Jo, S.-J. ; Jang, Ji Hoon ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Buk-Gu Gwangju
fDate :
9/28/2006 12:00:00 AM
Abstract :
Characteristics of 0.2 mum depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and sub-threshold characteristics owing to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum gm, ION/IOFF, sub-threshold slope, fT, and fmax of the QE SAG capless p-HEMT were 1.22 S/mm, 2.11times105, 65 mV/dec, 210 GHz and 250 GHz, and those of the D SAG capless p-HEMT were 1.12 S/mm, 1.27times104, 78 mV/dec, 185 GHz and 225 GHz. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46%
Keywords :
III-V semiconductors; aluminium compounds; buried layers; gallium arsenide; high electron mobility transistors; indium compounds; platinum; 0.2 micron; 185 GHz; 210 GHz; 225 GHz; 250 GHz; InAlAs-InGaAs; buried Pt technology; capless p-HEMT; depletion mode; quasienhancement mode; self-aligned gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062431
