Title :
Static memory element based on electron Y-branch switch
Author :
Hartmann, D. ; Reitzenstein, S. ; Worschech, L. ; Forchel, A.
Author_Institution :
Technische Phys., Univ. Wurzburg, Germany
fDate :
3/17/2005 12:00:00 AM
Abstract :
A compact memory element, based on an electron Y-branch switch, has been realised. Memory operation is a result of bilateral feedback coupling of each of the branches to the opposing side-gate. D-flip-flop in addition to RS-flip-flop operation is demonstrated.
Keywords :
circuit feedback; flip-flops; integrated memory circuits; nanoelectronics; 2-DEG; D-flip-flop; RS-flip-flop operation; branch bilateral feedback coupling; electron Y-branch switch; nanoelectronic devices; static memory element;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20058059
