• DocumentCode
    780087
  • Title

    Static memory element based on electron Y-branch switch

  • Author

    Hartmann, D. ; Reitzenstein, S. ; Worschech, L. ; Forchel, A.

  • Author_Institution
    Technische Phys., Univ. Wurzburg, Germany
  • Volume
    41
  • Issue
    6
  • fYear
    2005
  • fDate
    3/17/2005 12:00:00 AM
  • Firstpage
    303
  • Lastpage
    304
  • Abstract
    A compact memory element, based on an electron Y-branch switch, has been realised. Memory operation is a result of bilateral feedback coupling of each of the branches to the opposing side-gate. D-flip-flop in addition to RS-flip-flop operation is demonstrated.
  • Keywords
    circuit feedback; flip-flops; integrated memory circuits; nanoelectronics; 2-DEG; D-flip-flop; RS-flip-flop operation; branch bilateral feedback coupling; electron Y-branch switch; nanoelectronic devices; static memory element;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20058059
  • Filename
    1421162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780087