Title :
Effect of collector lateral scaling on performance of high-speed SiBe HBTs with f/sub T/>300 GHz
Author :
Rieh, Jae-Sung ; Khater, M. ; Jeseph, A. ; Freeman, G. ; Ahlgren, D.
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seongbuk Seoul
fDate :
9/28/2006 12:00:00 AM
Abstract :
The effect of collector lateral scaling on the performance of 300 GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; submillimetre wave transistors; 300 GHz; Kirk effect; RC delay; SiGe; collector lateral scaling effect; heterojunction bipolar transistor; high-speed HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061645
