Title :
p-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition
Author :
Chakrabarti, Subit ; Doggett, B. ; O´Haire, R. ; McGlynn, Enda ; Henry, M.O. ; Meaney, A. ; Mosnier, J.-P.
Author_Institution :
Nat. Centre for Plasma Sci. & Technol., Dublin City Univ.
fDate :
9/28/2006 12:00:00 AM
Abstract :
Nitrogen-doped ZnO thin films were deposited using the pulsed laser deposition technique. The epitaxial ZnO films were p-type in the measured temperature range 200-450 K, with hole concentrations and mobilities of 9.6times1015 cm-3 and 10.8 cm2/V-s, respectively, at room temperature. The films remained p-type under conditions of changing illumination. This result represents a step towards realisation of ZnO-based optoelectronic devices for high-temperature operation
Keywords :
II-VI semiconductors; hole density; hole mobility; nitrogen; plasma deposition; pulsed laser deposition; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; 200 to 450 K; ZnO:N; epitaxial thin films; hole concentrations; hole mobilities; optoelectronic devices; p-type conduction; plasma-assisted pulsed laser deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062161
